ty n-channel mosfet RSR030N06 z structure z dimensions (unit : mm) z features 1) low on-resistance. 2) small surface mount package (tsmt3). z application z inner circuit switching z packaging specifications package code taping basic ordering unit (pieces) RSR030N06 tl 3000 type z absolute maximum ratings (ta=25 c) ? 1 ? 2 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp w p d c tch c tstg limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 when mounted on a ceramic board source current (body diode) 60 150 ? 55 to + 150 20 3 12 0.8 12 1.0 z thermal resistance parameter c/w rth(ch-a) symbol limits unit c hannel to ambient 125 ? when mounted on a ceramic board ? tsmt3 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 ( 2 ) ( 1 ) ( 3 ) 2.9 2.8 1.9 1.6 0.95 0.95 0.4 abbreviated symbol : py (1) gate (2) source (3) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (3) (1) (2) 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
z electrical characteristics (ta=25 c) gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed parameter symbol i gss y fs min. ?? 10 av gs = 20v, v ds =0v v dd 30v typ. max. unit conditions v (br) dss 60 ?? vi d = 1ma, v gs =0v i dss ?? 1 av ds = 60v, v gs =0v v gs (th) 1.0 ? 2.5 v v ds = 10v, i d = 1ma ? 60 85 i d = 3a, v gs = 10v r ds (on) ? 70 100 m ? m ? m ? i d = 3a, v gs = 4.5v ? 75 105 i d = 3a, v gs = 4v 2.1 ?? sv ds = 10v, i d = 3a c iss ? 380 ? pf v ds = 10v c oss ? 95 45 ? pf v gs =0v c rss ? 8 ? pf f=1mhz t d (on) ? 12 ? ns t r ? 30 ? ns t d (off) ? 10 ? ns t f ? 5.0 ? ns q g ? 1.6 nc q gs ? 1.4 ? nc v gs = 5v q gd ?? nc i d = 3a ? ? ? ? ? ? ? ? ? v dd 30 v i d = 1.5a v gs = 10v r l 20 ? r g =10 ? r l 10 ? r g =10 ? ? z body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.2 v i s = 3a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ? pulsed ? 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com RSR030N06 product specification
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